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| IGBT Module PSII 100/06* Short Circuit SOA Capability Square RBSOA IC80 = V ES = C VCE(sat)typ.= 80 A 600 V 2.3 V Preliminary Data Sheet S15 R15 A15 A7 A9 D1 A1 U1 V1 G15 V12 V13 K1 G1 V3 V6 N15 V9 V10 Q1 N1 ECO-TOPTM 1 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH et he r se ta nd da l u ve stil ent ti t ta c n u opm te od el r ev pd Conditions Maximum Ratings 600 typical picture, for pin configuration see outline drawing *NTC optional TVJ = 25C to 150C V 20 V TC = 25C TC = 80C 120 80 A A Features VGE = 15 V; RG = 2.2 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H 200 360 10 A V VCE = VCES; VGE = 15 V; RG = 2.2 ; TVJ = 125C non-repetitive TC = 25C s W * * * * * * * * * * * * * * * * Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied 379 Conditions (TVJ Characteristic Values = 25C, unless otherwise specified) min. typ. max. 2.3 2.6 2.9 Applications IC = 130 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1.5 mA; VGE = VCE VCE = VCES; V V V AC and DC motor control AC servo and robot drives Power supplies Welding inverters 4.5 6.5 Advantages VGE = 0 V; TVJ = 25C TVJ = 125C 1.2 7.5 mA mA nA VCE = 0 V; VGE = 20 V 400 Inductive load, TVJ = 125C VCE = 300 V; IC = 80 A VGE = 15/0 V; RG = 2.2 25 11 150 30 0.8 2.3 4.2 ns ns ns ns mJ mJ Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Leads with expansion bend for stress relief VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) nF 0.33 K/W K/W 0.66 Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 80 A; TVJ = 25C TVJ = 125C IF = 60 A; diF/dt = 500 A/s; TVJ = 125C VR = 300 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Maximum Ratings 130 80 A A Characteristic Values min. typ. max. 1.85 1.40 28 100 2.06 V V A ns Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight Conditions IISOL 1 mA; 50/60 Hz Mounting torque (M5) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. t ee sh er ta nd au dl ve stil ent ti t ta c n u opm te od el pr dev 1.32 0.66 K/W K/W Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Maximum Ratings -40...+125 -40...+150 3000 C C V~ 3 26 50 Nm lb.in. m/s 2 Characteristic Values min. typ. max. 11.2 11.2 mm mm g 86 Package style and outline Dimensions in mm (1mm = 0.0394") 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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